Rapid Thermal Processing for Future Semiconductor Devices
Rapid Thermal Processing for Future Semiconductor Devices
Editorial Reviews
Book Description
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.
This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
Rapid Thermal Processing for Future Semiconductor Devices,H. Fukuda,Elsevier Science,0444513396,Acoustics & Sound,Congresses,Electronics - Semiconductors,Engineering - Electrical & Electronic,Heat treatment,Physics,Rapid thermal processing,Science/Mathematics,Semiconductors,Technology,Technology & Industrial Arts,Science / Physics
Books Info:
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Books Info
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