Editorial Reviews
Book Description
This book describes the design, physics, and performance of high density (Ne> 10E11 cmE-3) plasma sources which have been extensively explored in low pressure (p -0.1-100 mTorr) plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAS, and many other applications.
Beginning from the early 1970s up to the mid-1980s, only one type of plasma source, namely, capacitive RF discharge excited at a frequency of 13.56 M Hz, was commonly used in etch and deposition tools. The relatively low plasma density (Ne = 10E9 -1 OE1 0 cmE-3) which is typical for this type of source, was one of the major factors that limited plasma process capability, in particular, etching rate and film growth. Low plasma density is an inherent feature of a 13.56 MHz plasma tool, and is the result of the low ionization efficiency of a capacitively coupled RF discharge operating at a RF frequency of a few MHz.
The need for plasma process tools with high plasma densities of Ne> 1 OE12 cmE-3, was one of the motivations in the search for novel plasma sources with higher ionization efficiency. It was widely accepted that such plasmas could be generated in discharges excited at higher RF (including microwave) frequencies, or in discharges employing power coupling schemes which are more efficient than capacitive coupling, and by utilizing confinement and resonant effects of static magnetic field generated by external means (coils, permanent magnets).
In the last few years, substantial progress has been made in the design, research, and development of various types of plasma sources which were considered as candidates for the re- placement of a "traditional" 13.56 MHz capacitively coupled source.
The present book describes the physical principles, design features, plasma parameters, and process operation characteristics of RF and microwave high density plasma sources suitable for use in low pressure (1-100 mTorr) large area D = 15-25 cm) plasma processing.
This book presents a comprehensive survey, and a detailed description and characterization of most advanced high-density plasma sources used in plasma processing. The book is balanced in that it gives both a theoretical treatment, and practical applications. This book should be of considerable interest to scientists and engineers working on plasma source design, and process development.
About the Author
Oleg A. Popov is presently a research and development engineer at the Matsushita Electric Works, R&D Laboratory in Wobum, Massachusetts. After earning his doctorate in plasma physics from Moscow University, he worked on the physics of low pressure RF discharges. Since 1984 Dr. Popov has been involved in the design, studies and development of RF and microwave plasma sources used in plasma processing such as plasma and ion beam etching, PACVD, and ion implantation.
High Density Plasma Sources: Design, Physics, and Performance (Materials Science and Process Technology Series),Oleg A. Popov,Noyes Publications,0815513771,Engineering - Mechanical,High temperature plasmas,Physics,Plasma Physics,Plasma density,Plasma generators,Science,Science/Mathematics,Science / Physics,Technology: General Issues
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