MOS (Metal Oxide Semiconductor) Physics and Technology
Editorial Reviews
Book Description
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
The publisher, John Wiley & Sons
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
MOS (Metal Oxide Semiconductor) Physics and Technology
MOS (Metal Oxide Semiconductor) Physics and Technology,E. H. Nicollian,J. R. Brews,Wiley-Interscience,0471085006,Electronics - Semiconductors,Metal oxide semiconductors,Physics,Science,Science/Mathematics,Semiconductors,Technology,Condensed matter physics (liquids & solids),Materials science,Technology / Electronics / Semiconductors
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